Development of InGaN/GaN Light Emitting Diodes (LEDs) and Laser Diodes for Energy Efficient Lighting and Displays LEDs fabricated from indium gallium nitride (InGaN) have led to the realization of high-efficiency white solid-state lighting. Currently, InGaN white LEDs exhibit luminous efficacy greater than 150 lm/W, and wall-plug efficiencies higher than 60%. This has enabled LEDs to compete with traditional lighting technologies such as incandescent and compact fluorescent lighting (CFL). Further improvements in materials quality and cost reduction are necessary for widespread adoption of LEDs for lighting. Tunnel junction (TJ) was used to improve the light extraction efficiency and the p-type contact in order to reduce the operating voltage of the LEDs. Peak wall-plug efficiency as high as 70% have been achieved. A review of the unique polarization anisotropy in GaN is included for the different crystal orientations. Emphasis on semipolar LEDs will highlight high-power violet and blue emitters and considers the effects of indium incorporation and polarization. Semipolar GaN materials have enabled the development of high-power blue lasers. Laser light sources show great promise for directional white illumination with efficiency as high as 87lm/W. At their current adoption rates, by 2020, LEDs can reduce the world’s need for electricity by the equivalent of nearly 60 nuclear power plants. The history of the invention of blue LED and future uses of their lighting will be described.